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ShenZhen QingFengYuan Technology Co.,Ltd.

FES10D

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Description: DIODE GEN PURP 200V 10A TO277-3

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Not For New Designs
Current - Reverse Leakage @ Vr:
5 µA @ 200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
950 mV @ 10 A
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Series:
Automotive, AEC-Q101
Capacitance @ Vr, F:
140pF @ 4V, 1MHz
Supplier Device Package:
TO-277-3
Reverse Recovery Time (trr):
30 ns
Mfr:
onsemi
Technology:
Standard
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-277, 3-PowerDFN
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
10A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Base Product Number:
FES10
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Not For New Designs
Current - Reverse Leakage @ Vr:
5 µA @ 200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
950 mV @ 10 A
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Series:
Automotive, AEC-Q101
Capacitance @ Vr, F:
140pF @ 4V, 1MHz
Supplier Device Package:
TO-277-3
Reverse Recovery Time (trr):
30 ns
Mfr:
onsemi
Technology:
Standard
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-277, 3-PowerDFN
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
10A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Base Product Number:
FES10
FES10D
Diodo 200 V 10A montado en la superficie TO-277-3