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MNS1N5811US

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Description: DIODE GP 150V 3A SQ-MELF B

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
5 µA @ 150 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
875 mV @ 4 A
Package:
Bulk
Series:
Military, MIL-PRF-19500/477
Capacitance @ Vr, F:
60pF @ 10V, 1MHz
Supplier Device Package:
B, SQ-MELF
Reverse Recovery Time (trr):
30 ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
SQ-MELF, B
Voltage - DC Reverse (Vr) (Max):
150 V
Current - Average Rectified (Io):
3A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
5 µA @ 150 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
875 mV @ 4 A
Package:
Bulk
Series:
Military, MIL-PRF-19500/477
Capacitance @ Vr, F:
60pF @ 10V, 1MHz
Supplier Device Package:
B, SQ-MELF
Reverse Recovery Time (trr):
30 ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
SQ-MELF, B
Voltage - DC Reverse (Vr) (Max):
150 V
Current - Average Rectified (Io):
3A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
MNS1N5811US
Diodo de 150 V 3A montura de superficie B, SQ-MELF